42 research outputs found
Spin-polarized tunneling in ferromagnetic double barrier junctions
Spin-polarized tunneling in FMS/M/FMS double tunnel junctions where FMSs are
ferromagnetic semiconductor layers and M is a metal spacer is studied
theoretically within the single-site coherent potential approximation (CPA).
The exchange interaction between a conduction electron and localized moment of
the magnetic ion is treated in the framework of the s-f model. The spin
polarization in the FMS layers is observed to oscillates as a function of the
number of atomic planes in the spacer layer. Amplitude of these oscillations
decreases with increasing the exchange interaction in FMS layers.Comment: 10 pages, LaTex, 4 PS figure
Tunnel Magnetoresistance of a Single-Molecule Junction
Based on the non-equilibrium Green's function (NEGF) technique and the
Landauer-B\"{u}ttiker theory, the possibility of a molecular spin-electronic
device, which consists of a single C molecule attached to two
ferromagnetic electrodes with finite cross sections, is investigated. By
studying the coherent spin-dependent transport through the energy levels of the
molecule, it is shown that the tunnel magnetoresistance (TMR) of the molecular
junction depends on the applied voltages and the number of contact points
between the device electrodes and the molecule. The TMR values more than 60%
are obtained by adjusting the related parameters.Comment: 5 pages, 3 figure
Spin currents and magnetoresistance of graphene-based magnetic junctions
Using the tight-binding approximation and the nonequilibrium Green's function
approach, we investigate the coherent spin-dependent transport in planar
magnetic junctions consisting of two ferromagnetic (FM) electrodes separated by
a graphene flake (GF) with zigzag or armchair interfaces. It is found that the
electron conduction strongly depends on the geometry of contact between the GF
and the FM electrodes. In the case of zigzag interfaces, the junction
demonstrates a spin-valve effect with high magnetoresistance (MR) ratios and
shows negative differential resistance features for a single spin channel at
positive gate voltage. In the case of armchair interfaces, the current-voltage
characteristics behave linearly at low bias voltages and hence, both spin
channels are in on state with low MR ratios.Comment: 6 pages, 5 figure
Chemical and magnetic impurity effects on electronic properties of semiconductor quantum wires
We present a theoretical study of electronic states in magnetic and
nonmagnetic semiconductor quantum wires. The effects of chemical and magnetic
disorder at paramagnetic temperatures are investigated in single-site coherent
potential approximation. It is shown that the nonmagnetic impurity shifts the
band of carriers and suppresses the van Hove singularities of the local density
of states (LDOS) depending on the value of impurity concentration. The magnetic
impurity, however, broadens the band which depends on the strength of exchange
coupling, and in the high impurity concentration, the van Hove singularities in
the LDOS can completely disappear and the curves become smooth.Comment: 7 pages, 6 figure